Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-26
2007-06-26
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S664000, C438S666000, C438S682000
Reexamination Certificate
active
10770622
ABSTRACT:
A silicidation blocking layer (SBL) pattern is formed on a substrate including an active region and a field region. The SBL pattern covers the field region and exposes the active region. A silicide layer is formed on the active region by reacting metal with silicon existing in the active region. An insulation layer is formed on the substrate including the silicide layer. An opening exposing the silicide layer is formed by selectively etching the insulation layer under a condition having an etching selectivity between the SBL and the insulation layer. Conductive material is filled up the opening. The field region of a substrate is sufficiently protected by the SBL pattern without any additional process so that the failure of a semiconductor device is effectively prevented because the flow of a leakage current through the field region is blocked.
REFERENCES:
patent: 6015748 (2000-01-01), Kim et al.
patent: 6326669 (2001-12-01), Hwang et al.
patent: 6339018 (2002-01-01), Ballantine et al.
patent: 6583042 (2003-06-01), Manning
Jackson Jerome
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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