Method of manufacturing a semiconductor device having a...

Details Method of manufacturing a semiconductor device having a... Method of manufacturing a semiconductor device having a...

2006-11-28

2006-11-28

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S142000, C438S186000, C257SE21407

Reexamination Certificate

active

07141465

ABSTRACT:
A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof.The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.

REFERENCES:
patent: 5161235 (1992-11-01), Shur et al.
patent: 6410947 (2002-06-01), Wada
patent: 6534790 (2003-03-01), Kato et al
patent: 2002/0003245 (2002-01-01), Kato et al.
patent: 0 875 881 (1998-11-01), None
patent: 2000-149309 (2000-05-01), None

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