Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-15
2011-03-15
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S546000, C438S551000, C438S508000
Reexamination Certificate
active
07906400
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a first mask pattern exposing a first region for forming a first transistor and a second region for forming a second transistor, performing a first ion implantation for forming well regions using the first mask pattern, performing a second ion implantation for threshold voltage (Vth) adjustment of the first transistor using the first mask pattern, removing the first mask pattern and forming a second mask pattern in which the first region is covered and the second region is opened, performing a third ion implantation for Vth adjustment of the second transistor using the second mask pattern, forming first and second gate insulating films in the first and second regions respectively, and forming first and second gate electrodes in the first and second regions respectively.
REFERENCES:
patent: 7569898 (2009-08-01), Kato et al.
patent: 7605041 (2009-10-01), Ema et al.
patent: 2004-14779 (2004-01-01), None
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Le Dung A.
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