Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-21
2006-03-21
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S248000, C438S391000
Reexamination Certificate
active
07015090
ABSTRACT:
At least not less than one capacitor formation trench providing an uneven surface is formed on the surface of a capacitor formation region. Thus, the surface area of a capacitor is increased, which enables improvement of the capacitance of the capacitor per unit area. Further, by forming the capacitor formation trench and an element formation trench that are formed in the surface of the semiconductor substrate by the same step, it is possible to simplify the manufacturing process. Whereas, a dielectric film of the capacitor in the capacitor formation region and a high-voltage gate insulating film in a MISFET formation region are formed by the same step; alternatively, the dielectric film of the capacitor in the capacitor formation region and a memory gate interlayer film between a polysilicon layer and a polysilicon layer in the memory cell formation region are formed by the same step.
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Fukumura Tatsuya
Haraguchi Keiichi
Ikeda Yoshihiro
Kishi Koji
Okada Daisuke
Antonelli, Terry Stout and Kraus, LLP.
Fourson George
Renesas Technology Corp.
Toledo Fernando L.
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