Method of manufacturing a semiconductor device comprising a ferr

Details Method of manufacturing a semiconductor device comprising a ferr Method of manufacturing a semiconductor device comprising a ferr

1998-02-18

2000-10-31

Picard, Leo P.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438253, 438396, 257295, H01L 2912

Patent

active

061401730

ABSTRACT:
The invention relates to a semiconductor device comprising a semiconductor body (3) with a semiconductor element (1) with an electrically conducting region (5) on which a capacitor (2) forming a memory element is present with a lower electrode (11), an oxidic ferroelectric dielectric (12), and an upper electrode (13), which lower electrode (11) makes electrical contact with the conducting region (5) and comprises a layer with a conductive metal oxide (112) and a layer (111) comprising platinum. The layer with the conductive metal oxide (112) acts as an oxygen barrier during manufacture. The invention also relates to a method of manufacturing such a semiconductor device.
According to the invention, the device is characterized in that the layer comprising platinum (111) contains more than 15 atom % of a metal capable of forming a conductive metal oxide, and in that the layer (112) with the conductive metal oxide is present between the layer (111) comprising platinum and the ferroelectric dielectric (12).
A good electrical contact between the lower electrode (11) and the conducting region (5) after manufacture is achieved thereby.

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