Method of manufacturing a semiconductor device capable of...

Details Method of manufacturing a semiconductor device capable of... Method of manufacturing a semiconductor device capable of...

2005-12-06

2005-12-06

Deo, Duy-Vu N. (Department: 1765)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S758000, C438S620000

Reexamination Certificate

active

06972453

ABSTRACT:
In a method of manufacturing a semiconductor device, with respect to a stacked film including a silicon included organic film and a silicon non-included organic film, the silicon non-included organic film is etched by using the etching gas of mixed N2 gas and H2 gas.

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