Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-18
2006-07-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S795000
Reexamination Certificate
active
07078281
ABSTRACT:
Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.
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Australian Patent Office Search Report and Written Opinion for Singapore Patent Application Serial No. 200204790-0 mailed on Jun. 17, 2004.
Moriwaka Tomoaki
Tanaka Koichiro
Costellia Jeffrey L.
Isaac Stanetta
Lebentritt Michael
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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