Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-09-27
2005-09-27
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S763000, C118S050000, C118S724000
Reexamination Certificate
active
06949474
ABSTRACT:
This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller61controls a heater2so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller62provides a reactive gas into a reaction tube1during the temperature regulating process, it controls a valve31to stop it during the temperature changing process.
REFERENCES:
patent: 5976990 (1999-11-01), Mercaldi et al.
patent: A 7-297205 (1995-11-01), None
Inokuchi Yasuhiro
Kunii Yasuo
Moriya Atsushi
Murota Junichi
Hitachi Kokusai Electric Inc.
Picardat Kevin M.
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