Method of manufacturing a semiconductor device and a...

Details Method of manufacturing a semiconductor device and a... Method of manufacturing a semiconductor device and a...

2008-03-25

2010-02-23

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S179000, C438S233000, C257SE21619, C257SE21427

Reexamination Certificate

active

07666745

ABSTRACT:
A method of manufacturing a semiconductor device, has forming a gate insulating film over a surface of a substrate, eliminating a portion of the gate insulating film in a region, forming a gate electrode over the gate insulating film and a drain electrode on the region, implanting first impurities into the substrate using the gate electrode and the drain electrode as a mask, forming an insulating film to fill the space between the gate electrode and the drain electrode, and implanting second impurities into the substrate to form a source region using the gate electrode, the drain electrode and the insulating film as a mask.

REFERENCES:
patent: 5672531 (1997-09-01), Gardner et al.
patent: 5923982 (1999-07-01), Kadosh et al.
patent: 2006/0043415 (2006-03-01), Okamoto et al.
patent: 11-186543 (2009-07-01), None

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