Method of manufacturing a semiconductor device and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S197000, C438S222000, C257SE21131, C257SE21377

Reexamination Certificate

active

07867864

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device comprising a field effect transistor, in which method a semiconductor body of silicon with a substrate is provided at a surface thereof with a source region and a drain region of a first conductivity type which are situated above a buried isolation region and with a channel region, between the source and drain regions, of a second conductivity type, opposite to the first conductivity type, and with a gate region separated from the surface of the semiconductor body by a gate dielectric and situated above the channel region, wherein a mesa is formed in the semiconductor body in which the channel region is formed and wherein the source and drain regions are formed on both sides of the mesa in a semiconductor region that is formed using epitaxial growth, the source and drain regions thereby contacting the channel region.

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Tabrizi M M et al; “Extracting of Substrate Network Resistances in RFCMOS Transistors”; Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2004, Digest of Papers; 2004 Atlanta, GA, USA; Sep. 8-10, 2004, p. 219-222.

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