Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-11
2011-01-11
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S222000, C257SE21131, C257SE21377
Reexamination Certificate
active
07867864
ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device comprising a field effect transistor, in which method a semiconductor body of silicon with a substrate is provided at a surface thereof with a source region and a drain region of a first conductivity type which are situated above a buried isolation region and with a channel region, between the source and drain regions, of a second conductivity type, opposite to the first conductivity type, and with a gate region separated from the surface of the semiconductor body by a gate dielectric and situated above the channel region, wherein a mesa is formed in the semiconductor body in which the channel region is formed and wherein the source and drain regions are formed on both sides of the mesa in a semiconductor region that is formed using epitaxial growth, the source and drain regions thereby contacting the channel region.
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Curatola Giberto
Hijzen Erwin
Meunier-Beillard Philippe
Nuttinck Sebastien
Lee Cheung
Lindsay, Jr. Walter L
NXP B.V.
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