Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-26
1999-06-29
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438612, 438613, H01L 2144
Patent
active
059181443
ABSTRACT:
When BLM films as a barrier metal under solder balls are deposited to Al pad electrodes by a lift-off method utilizing a deformed resist pattern, a wafer is heated before sputter-forming of the BLM film, thereby eliminating a water content contained in a first layer polyimide film. In an rearrangement process, a wiring connecting the electrode pad and the solder ball is formed with the BLM film. Since degassing upon sputter forming of the BLM film is suppressed by the elimination of the water content, peeling of the BLM film on the first layer polyimide film is prevented. The wafer may also be heated simultaneously with the formation of the deformed resist pattern by Ar.sup.+ reverse sputtering (into overhang shape). Adhesion between the surface protection film and the BLM film upon rearrangement of the solder balls is thus improved in the flip chip bonding method.
REFERENCES:
patent: 4505029 (1985-03-01), Owyang et al.
patent: 5143865 (1992-09-01), Hideshima et al.
patent: 5310699 (1994-05-01), Chikawa et al.
patent: 5541135 (1996-07-01), Pfeifer et al.
patent: 5576629 (1996-11-01), Turner et al.
patent: 5672542 (1997-09-01), Schwiebert et al.
Collins Devin
Picardat Kevin M.
Sony Corporation
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