Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-11-26
1999-11-23
Kunemund, Robert
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438683, 438706, H01L 21441
Patent
active
059900075
ABSTRACT:
This invention provides a method of manufacturing a semiconductor device, including the steps of forming an insulating film and a first metal film on one major surface of a semiconductor substrate, each of the insulating film and the first metal film having a partially exposed surface, and selectively forming a second metal film on the exposed surface of the first metal film, wherein formation of the second metal film is performed in an atmosphere containing a gasified silicon compound obtained upon gasifying a liquid silicon compound containing at least one element selected from the group consisting of carbon, hydrogen, oxygen, chlorine, and fluorine, or its reaction product, whereby the exposed surface of the insulating film is chemically modified with the silicon compound or its reaction product.
REFERENCES:
patent: 4501769 (1985-02-01), Hieber et al.
patent: 5498768 (1996-03-01), Nishitani et al.
patent: 5605867 (1997-02-01), Sato et al.
patent: 5620925 (1997-04-01), Nakata et al.
patent: 5635423 (1997-06-01), Huang et al.
Hitoshi Itoh et al., "Production-Level Planarized Metallization for Lower Half-Micron Devices Using Tungsten Selective CVD", Conference Proceedings ULSI XI, Materials Research Society, pp. 467-473, Oct. 24-25, 1996.
S. E. Schulz et al., "Influence of Wafer Prelcean before Selective Tungsten CVD on Surface Properties of Interconnect and Intermetal Dielectric Materials", phys. stat. sol. (a) 145, pp. 311-318, May 31, 1994.
Fukuhara Johta
Itoh Hitoshi
Kajita Akihiro
Otsuka Kenichi
Oya Katsuhiko
Deo Duy-Vu
Kabushiki Kaisha Toshiba
Kunemund Robert
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