Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1995-03-17

1997-08-19

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438291, 438298, H01L 21265

Patent

active

056588119

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed. After an insulating film having an opening is formed on a first thin tungsten film, an impurity is introduced into the substrate through the opening to form a punch-through stopper between a source and a drain. Then, on the first tungsten film inside the opening, a second tungsten film is selectively deposited to form a gate electrode. With this method, it is possible to easily fabricate high-speed MOSFETs whose channel length is less than half a micron.

REFERENCES:
patent: 4902645 (1990-02-01), Ohba
patent: 5073512 (1991-12-01), Yoshino
patent: 5175119 (1992-12-01), Matsutami
patent: 5194926 (1993-03-01), Hayden
patent: 5399508 (1995-03-01), Nowak
patent: 5413949 (1995-05-01), Hong
patent: 5444008 (1995-08-01), Han et al.
patent: 5464782 (1995-11-01), Koh
patent: 5571738 (1996-11-01), Krivokapic

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1104385