Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-03-11
1999-08-03
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438250, 438393, H01L 218238
Patent
active
059337192
ABSTRACT:
The proposed semiconductor device can provide a capacitor having an excellent capacitance controllability thereof and a high reliability thereof. A method of manufacturing a semiconductor device comprises the steps of: forming a first insulating film on a semiconductor substrate on which a lower capacitor electrode has been formed; removing the first insulating film at a capacitor forming region on the lower capacitor electrode; forming a second insulating film on the semiconductor substrate; forming a conductive film on the formed second insulating film; patterning the conductive film and the second insulating film, to leave both the films at least at the capacitor forming region; patterning the first insulating film, to form a contact hole with the lower capacitor electrode at a region other than the capacitor forming region; and dry etching the lower capacitor electrode, to remove a natural oxide film formed at a bottom of the contact hole.
REFERENCES:
patent: 5065220 (1991-11-01), Paterson et al.
patent: 5395782 (1995-03-01), Ohkoda et al.
patent: 5591663 (1997-01-01), Nasu et al.
patent: 5670808 (1997-09-01), Nishihori et al.
Nii Hideaki
Ono Mizuki
Kabushiki Kaisha Toshiba
Nguyen Tuan H.
LandOfFree
Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-859575