Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2010-04-13

2011-11-15

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S309000, C438S312000, C257S197000, C257S183000, C257S189000

Reexamination Certificate

active

08058124

ABSTRACT:
The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed. Further, a second growing operation for selectively growing the second polycrystalline semiconductor layer and the third polycrystalline semiconductor layer on the exposed portion of the p-type polycrystalline semiconductor film exposed in the lower surface of the visor section without contacting the silicon nitride film, while growing the second semiconductor layer and the third semiconductor layer, so that the third semiconductor layer is in contact with the third polycrystalline semiconductor layer.

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patent: 2002/0142557 (2002-10-01), Hashimoto et al.
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Chinese Patent Office issued a Chinese Office Action dated Nov. 27, 2009, Application No. 200810145329.1.

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