Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-12-15

2009-08-11

Tran, Minh-Load T (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S618000, C257SE21252

Reexamination Certificate

active

07572694

ABSTRACT:
A method for manufacturing a semiconductor device includes forming an insulation film over a semiconductor substrate having a conduction layer; forming a trench pattern over the insulation film; etching an upper portion of the insulation film by using the trench pattern as a mask to form a trench; removing the trench pattern; forming a spacer film over the insulation film having the trench; etching the space film to form a spacer by using a blanket etching process, the spacer remaining over an edge of an inner portion of the trench; etching the insulation film to form a via hole by using as a mask the spacer; completely removing the spacer; forming a barrier film over sidewalls of the trench and the via hole; and forming a metal line with which fills inner portions of the trench and the via hole.

REFERENCES:
patent: 6255168 (2001-07-01), Gau
patent: 2002/0137319 (2002-09-01), Hsu et al.
patent: 1020000004334 (2000-01-01), None
patent: 1020030056911 (2003-07-01), None

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