Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-01-19

2009-11-10

Rose, Kiesha L (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C257SE21273

Reexamination Certificate

active

07615498

ABSTRACT:
A semiconductor device200comprises a SiCN film202formed on a semiconductor substrate (not shown), a first SiOC film204formed thereon, a SiCN film208formed thereon, a second SiOC film210formed thereon, a SiO2film212and a SiCN film214formed thereon. The first SiOC film204has a barrier metal layer216and via218formed therein, and the second SiOC film210has a barrier metal layer220and wiring metal layer222formed therein. Carbon content of the second SiOC film210is adjusted larger than that of the first SiOC film204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

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