Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-06-29

2008-10-28

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S583000, C438S738000, C257SE21680, C257SE21029

Reexamination Certificate

active

07442606

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor substrate in which a floating gate pattern is formed. A dielectric layer, a conductive layer for a control gate, a tungsten silicide layer, a first silicon oxynitride layer, a hard mask layer, a second silicon oxynitride layer and an Organic Bottom Anti-Reflective Coating (BARC) layer are formed over the semiconductor substrate including the floating gate pattern. The BARC layer, the second silicon oxynitride layer, the hard mask layer and the first silicon oxynitride layer are removed. The tungsten silicide layer and the conductive layer for the control gate are removed. The dielectric layer is removed to form spacers on sides of the floating gate. The floating gate is then removed.

REFERENCES:
patent: 6218689 (2001-04-01), Chang et al.
patent: 6380029 (2002-04-01), Chang et al.
patent: 2007/0004140 (2007-01-01), Jang et al.

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