Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2004-02-13

2008-09-30

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21690

Reexamination Certificate

active

07429513

ABSTRACT:
In the method for manufacturing a semiconductor device (100), which comprises a semiconducting body (1) having a surface (2) with a source region (3) and a drain region (4) defining a channel direction (102) and a channel region (101), a first stack (6) of layers on top of the channel region (101), the first stack (6) comprising, in this order, a tunnel dielectric layer (11), a charge storage layer (10) for storing an electric charge and a control gate layer (9), and a second stack (7) of layers on top of the channel region (101) directly adjacent to the first stack (6) in the channel direction (102), the second stack (7) comprising an access gate layer (14) electrically insulated from the semiconducting body (1) and from the first stack (6), initially a first sacrificial layer (90) is used, which is later replaced by the control gate layer (9). A second sacrificial layer (20) is used to protect the part (82) off the surface (2) adjacent to the second sidewall (81) and opposite to the position (83) of the second stack (7) when providing the access gate layer (14).

REFERENCES:
patent: 5278439 (1994-01-01), Ma et al.
patent: 6251729 (2001-06-01), Montree et al.
patent: 6432773 (2002-08-01), Ma et al.
patent: WO 01 67 517 (2000-03-01), None

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