Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-11
2007-12-11
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S476000, C257SE21561
Reexamination Certificate
active
10940821
ABSTRACT:
It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.
REFERENCES:
patent: 3535775 (1970-10-01), Garfinkel et al.
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 4477308 (1984-10-01), Gibson et al.
patent: 4534820 (1985-08-01), Mori et al.
patent: 4608096 (1986-08-01), Hill
patent: 5229305 (1993-07-01), Baker
patent: 5244819 (1993-09-01), Yue
patent: 5275896 (1994-01-01), Garofalo et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5714395 (1998-02-01), Bruel
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5814540 (1998-09-01), Takemura et al.
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
patent: 5915174 (1999-06-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5949115 (1999-09-01), Yamazaki et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5960252 (1999-09-01), Matsuki et al.
patent: 5961743 (1999-10-01), Yamazaki et al.
patent: 5977559 (1999-11-01), Zhang et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6022458 (2000-02-01), Ichikawa
patent: 6027987 (2000-02-01), Yamazaki et al.
patent: 6048758 (2000-04-01), Yamazaki et al.
patent: 6063654 (2000-05-01), Ohtani
patent: 6066518 (2000-05-01), Yamazaki
patent: 6066547 (2000-05-01), Maekawa
patent: 6071764 (2000-06-01), Zhang et al.
patent: 6071766 (2000-06-01), Yamazaki et al.
patent: 6072193 (2000-06-01), Ohnuma et al.
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6077758 (2000-06-01), Zhang et al.
patent: 6083324 (2000-07-01), Henley et al.
patent: 6084247 (2000-07-01), Yamazaki et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6093934 (2000-07-01), Yamazaki et al.
patent: 6100562 (2000-08-01), Yamazaki et al.
patent: 6111557 (2000-08-01), Koyama et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6133073 (2000-10-01), Yamazaki et al.
patent: 6133075 (2000-10-01), Yamazaki et al.
patent: 6133119 (2000-10-01), Yamazaki
patent: 6153445 (2000-11-01), Yamazaki et al.
patent: 6156590 (2000-12-01), Yamazaki et al.
patent: 6156628 (2000-12-01), Ohnuma et al.
patent: 6160268 (2000-12-01), Yamazaki
patent: 6162704 (2000-12-01), Yamazaki et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6180439 (2001-01-01), Yamazaki et al.
patent: 6184559 (2001-02-01), Hayakawa et al.
patent: 6194255 (2001-02-01), Hiroki et al.
patent: 6197624 (2001-03-01), Yamazaki
patent: 6201585 (2001-03-01), Takano et al.
patent: 6204101 (2001-03-01), Yamazaki et al.
patent: 6204154 (2001-03-01), Zhang et al.
patent: 6207969 (2001-03-01), Yamazaki
patent: 6218219 (2001-04-01), Yamazaki et al.
patent: 6225152 (2001-05-01), Yamazaki et al.
patent: 6232205 (2001-05-01), Ohtani
patent: 6232621 (2001-05-01), Yamazaki et al.
patent: 6242290 (2001-06-01), Nakajima et al.
patent: 6251712 (2001-06-01), Tanaka et al.
patent: 6255195 (2001-07-01), Linn et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6287900 (2001-09-01), Yamazaki et al.
patent: 6291275 (2001-09-01), Yamazaki et al.
patent: 6291888 (2001-09-01), Bhat et al.
patent: 6294441 (2001-09-01), Yamazaki
patent: 6300659 (2001-10-01), Zhang et al.
patent: 6303415 (2001-10-01), Yamazaki
patent: 6303963 (2001-10-01), Ohtani et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6316789 (2001-11-01), Yamazaki et al.
patent: 6316810 (2001-11-01), Yamazaki et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6337259 (2002-01-01), Ueda et al.
patent: 6376336 (2002-04-01), Buynoski
patent: 6396147 (2002-05-01), Adachi et al.
patent: 6399454 (2002-06-01), Yamazaki
patent: 6436745 (2002-08-01), Gotou et al.
patent: 6451672 (2002-09-01), Caruso et al.
patent: 6489189 (2002-12-01), Yamazaki et al.
patent: RE38266 (2003-10-01), Yamazaki et al.
patent: 6670259 (2003-12-01), Chan
patent: 6686262 (2004-02-01), Yamazaki et al.
patent: 6803296 (2004-10-01), Miyairi
patent: 6808968 (2004-10-01), Takayama et al.
patent: 6812081 (2004-11-01), Yamazaki et al.
patent: 6821827 (2004-11-01), Nakamura et al.
patent: 6821828 (2004-11-01), Ichijo et al.
patent: 6913956 (2005-07-01), Hamada et al.
patent: 6962837 (2005-11-01), Yamazaki
patent: 6991976 (2006-01-01), Yamazaki et al.
patent: 7045444 (2006-05-01), Yamazaki et al.
patent: 7052943 (2006-05-01), Yamazaki et al.
patent: 7109074 (2006-09-01), Ichijo et al.
patent: 7115453 (2006-10-01), Nakamura et al.
patent: 7122450 (2006-10-01), Yamazaki et al.
patent: 7129120 (2006-10-01), Yamazaki
patent: 7141822 (2006-11-01), Nakamura et al.
patent: 2001/0034088 (2001-10-01), Nakamura et al.
patent: 2002/0086469 (2002-07-01), Kim et al.
patent: 2002/0106861 (2002-08-01), Yamazaki
patent: 2002/0151120 (2002-10-01), Yamazaki et al.
patent: 0 651 431 (1995-05-01), None
patent: 05-109737 (1993-04-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-183540 (1995-07-01), None
patent: 08-078329 (1996-03-01), None
patent: 09-074207 (1997-03-01), None
patent: 09-115831 (1997-05-01), None
patent: 3032801 (2000-02-01), None
patent: 3032801 (2000-04-01), None
patent: 2000-260777 (2000-09-01), None
patent: 2001-210828 (2001-
Asami Taketomi
Dairiki Koji
Ichijo Mitsuhiro
Kajiwara Masayuki
Koezuka Junichi
Booth Richard A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3897467