Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-14
2007-08-14
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S305000, C438S592000, C438S649000, C438S660000, C438S659000, C438S585000, C438S586000, C257SE21200, C257SE21130, C257SE21203, C257SE21204
Reexamination Certificate
active
10923045
ABSTRACT:
For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.
REFERENCES:
patent: 6294435 (2001-09-01), Chu et al.
patent: 7078342 (2006-07-01), Pan et al.
patent: 2001/0008796 (2001-07-01), Matsudo et al.
patent: 05-343352 (1993-12-01), None
patent: 07-078991 (1995-03-01), None
Fukayama Yoshio
Katoh Takeshi
Konagaya Tatsuyuki
Obara Yasuhiro
Sakashita Masaki
Antonelli, Terry Stout & Kraus, LLP.
Lindsay, Jr. Walter
Renesas Technology Corp.
LandOfFree
Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3837175