Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-04
2006-04-04
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S563000
Reexamination Certificate
active
07022576
ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. According to the present invention, a sidewall layer containing impurities is formed on a part of gate electrode, thereby forming a low concentration source/drain electrode for a lightly doped drain (LDD) structure not by conventional ion implanting process but by out diffusion of impurities contained in the sidewall. Thus, it is made possible to minimizes damages of substrate due to ion implanting process, since the number of process of ion implantation may be naturally minimized through the above mentioned ion implantation process according to the present invention. Also, it is made possible for gate electrode to maintain its size independently, regardless of distance between source electrode and drain electrode, by excluding a role of ion implanting mask which has been performed by gate electrode.
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Booth Richard A.
DongbuAnam Semiconductor Inc.
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