Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-06-21

2005-06-21

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S301000, C438S305000, C438S514000

Reexamination Certificate

active

06908823

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. According to the present invention, a passivation layer is temporarily formed on semiconductor substrate and a process of implanting impurities is conducted by the passivation layer as a protection mask, thereby inducing damages of substrate due to ion implantation processes to be minimized.According to the present invention, implantation of impurities depends on thickness of the passivation layer, so that it is made possible to freely control impurity implantation by controlling thickness of passivation layer. Therefore, it is made possible to control a diffusion range of the lightly doped source/drain electrode.

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