Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-03-01

2005-03-01

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S194000, C438S301000

Reexamination Certificate

active

06861322

ABSTRACT:
A heat treatment for diffusing impurity ions implanted into a silicon layer is performed at a heat treatment temperature which is less than an aggregation temperature of the silicon layer. A thermal aggregation of the silicon layer can be inhibited, thereby reducing a silicon deficiency of the silicon layer.

REFERENCES:
patent: 5807770 (1998-09-01), Mineji
patent: 6391692 (2002-05-01), Nakamura

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