Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-04-05

2005-04-05

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000

Reexamination Certificate

active

06875665

ABSTRACT:
An aspect of the present invention includes a first MOSFET having a first gate electrode formed on a first semiconductor layer in a first region of a semiconductor substrate, a first channel region formed immediately below the first gate electrode in the first semiconductor layer, a first diffusion layer constituting source/drain regions formed at both the sides of the first channel region in the first semiconductor layer, a first epitaxial layer formed on the first diffusion layer, and a first silicide layer formed on the first epitaxial layer, and a second MOSFET having a second gate electrode formed on a second semiconductor layer in a second region of the semiconductor substrate, a second channel region formed immediately below the second gate electrode in the second semiconductor layer, a second diffusion layer constituting source/drain regions formed at both the sides of the second channel region in the second semiconductor layer, and a second silicide layer formed on the second diffusion layer.

REFERENCES:
patent: 3887993 (1975-06-01), Okada et al.
patent: 3959025 (1976-05-01), Polinsky
patent: 6150221 (2000-11-01), Aoyama
patent: 6165826 (2000-12-01), Chau et al.
patent: 6455366 (2002-09-01), Lee
patent: 10-233456 (1998-09-01), None

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