Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1999-05-10

2000-03-07

Picardat, Kevin M.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438396, H01L 218242

Patent

active

060339527

ABSTRACT:
A semiconductor device manufacturing method which involves a fewer number of manufacturing processes and which eliminates the use of expensive high precision stepper and half-tone mask, or the like, by employing a simplified process flow, in which method an identical mask is reused to ensure registration margin without involving a high-resolution process. A contact hole requires solely a minimum diameter of 0.30 .mu.m or thereabouts, thereby resulting in and added margin for the minimum diameter and eliminating a process for reducing a hole diameter. Even if the hole diameter has a deviation of about 0.05 .mu.m, contact can be established with a silicon substrate, thereby eliminating a necessity for an expensive, high precision stepper which has been required for ensuring a registration margin. A damaged layer, which would otherwise cause an increase in the resistance of the storage node direct contact, is eliminated simultaneously with etching of a thick polysilicon film, thus eliminating a chemical dry etching (CDE) process which has conventionally been used for removing a damaged layer.

REFERENCES:
patent: 5272103 (1993-12-01), Nakamura
patent: 5691249 (1997-11-01), Watanabe et al.
patent: 5789291 (1998-04-01), Sung
patent: 5883006 (1999-03-01), Iba

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