Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2008-01-08

2008-01-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S476000, C257SE21318, C257SE21561

Reexamination Certificate

active

07316947

ABSTRACT:
An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.

REFERENCES:
patent: 3535775 (1970-10-01), Garfinkel et al.
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 4477308 (1984-10-01), Gibson et al.
patent: 4534820 (1985-08-01), Mori et al.
patent: 4608096 (1986-08-01), Hill
patent: 5229305 (1993-07-01), Baker
patent: 5244819 (1993-09-01), Yue
patent: 5275896 (1994-01-01), Garofalo et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5714395 (1998-02-01), Bruel
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5814540 (1998-09-01), Takemura et al.
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
patent: 5915174 (1999-06-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5949115 (1999-09-01), Yamazaki et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5960252 (1999-09-01), Matsuki et al.
patent: 5961743 (1999-10-01), Yamazaki et al.
patent: 5977559 (1999-11-01), Zhang et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6022458 (2000-02-01), Ichikawa
patent: 6027987 (2000-02-01), Yamazaki et al.
patent: 6048758 (2000-04-01), Yamazaki et al.
patent: 6063654 (2000-05-01), Ohtani
patent: 6066518 (2000-05-01), Yamazaki
patent: 6071764 (2000-06-01), Zhang et al.
patent: 6071766 (2000-06-01), Yamazaki et al.
patent: 6072193 (2000-06-01), Ohnuma et al.
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6077758 (2000-06-01), Zhang et al.
patent: 6083324 (2000-07-01), Henley et al.
patent: 6084247 (2000-07-01), Yamazaki et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6093934 (2000-07-01), Yamazaki et al.
patent: 6100562 (2000-08-01), Yamazaki et al.
patent: 6111557 (2000-08-01), Koyama et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6133073 (2000-10-01), Yamazaki et al.
patent: 6133075 (2000-10-01), Yamazaki et al.
patent: 6133119 (2000-10-01), Yamazaki
patent: 6153445 (2000-11-01), Yamazaki et al.
patent: 6156590 (2000-12-01), Yamazaki et al.
patent: 6156628 (2000-12-01), Ohnuma et al.
patent: 6160268 (2000-12-01), Yamazaki
patent: 6162704 (2000-12-01), Yamazaki et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6180439 (2001-01-01), Yamazaki et al.
patent: 6184559 (2001-02-01), Hayakawa et al.
patent: 6194255 (2001-02-01), Hiroki et al.
patent: 6197624 (2001-03-01), Yamazaki
patent: 6201585 (2001-03-01), Takano et al.
patent: 6204101 (2001-03-01), Yamazaki et al.
patent: 6204154 (2001-03-01), Zhang et al.
patent: 6207969 (2001-03-01), Yamazaki
patent: 6218219 (2001-04-01), Yamazaki et al.
patent: 6225152 (2001-05-01), Yamazaki et al.
patent: 6232205 (2001-05-01), Ohtani
patent: 6232621 (2001-05-01), Yamazaki et al.
patent: 6242290 (2001-06-01), Nakajima et al.
patent: 6251712 (2001-06-01), Tanaka et al.
patent: 6255195 (2001-07-01), Linn et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6287900 (2001-09-01), Yamazaki et al.
patent: 6291275 (2001-09-01), Yamazaki et al.
patent: 6291888 (2001-09-01), Bhat et al.
patent: 6294441 (2001-09-01), Yamazaki
patent: 6300659 (2001-10-01), Zhang et al.
patent: 6303415 (2001-10-01), Yamazaki
patent: 6303963 (2001-10-01), Ohtani et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6316789 (2001-11-01), Yamazaki et al.
patent: 6316810 (2001-11-01), Yamazaki et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6337259 (2002-01-01), Ueda et al.
patent: 6376336 (2002-04-01), Buynoski
patent: 6396147 (2002-05-01), Adachi et al.
patent: 6399454 (2002-06-01), Yamazaki
patent: 6436745 (2002-08-01), Gotou et al.
patent: 6451672 (2002-09-01), Caruso et al.
patent: 6489189 (2002-12-01), Yamazaki et al.
patent: RE38266 (2003-10-01), Yamazaki et al.
patent: 6670259 (2003-12-01), Chan
patent: 6686262 (2004-02-01), Yamazaki et al.
patent: 6803296 (2004-10-01), Miyairi
patent: 6808968 (2004-10-01), Yamazaki et al.
patent: 6812081 (2004-11-01), Yamazaki et al.
patent: 6821827 (2004-11-01), Nakamura et al.
patent: 6821828 (2004-11-01), Ichijo et al.
patent: 6913956 (2005-07-01), Hamada et al.
patent: 6962837 (2005-11-01), Yamazaki
patent: 6991976 (2006-01-01), Yamazaki et al.
patent: 7052943 (2006-05-01), Yamazaki et al.
patent: 7109074 (2006-09-01), Ichijo et al.
patent: 7115453 (2006-10-01), Nakamura et al.
patent: 7129120 (2006-10-01), Yamazaki
patent: 2001/0034088 (2001-10-01), Nakamura et al.
patent: 2002/0086469 (2002-07-01), Kim et al.
patent: 2002/0106861 (2002-08-01), Yamazaki
patent: 0 651 431 (1995-05-01), None
patent: 05-109737 (1993-04-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-183540 (1995-07-01), None
patent: 08-078329 (1996-03-01), None
patent: 09-074207 (1997-03-01), None
patent: 09-115831 (1997-05-01), None
patent: 3032801 (2000-02-01), None
patent: 3032801 (2000-04-01), None
patent: 2000-260777 (2000-09-01), None
patent: 2001-210828 (2001-08-01), None
Jones, K. S. ; Kuryliw, E.; Murto, R.; Rendon, M.; Talwar, S.; Boron Diffusion upon Annealing of Laser Thermal processed silicon, Ion Implantation Technology, 2000, Conference on, 2000, pp. 111-114.
Lurng Shehng Lee; Chung Len Lee, Argon Ion-Implantation on Polysilicon or Amorphous-silicon for Bor penetration Suppression in p/sup+/pMOSFET, Electron Devic

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2780532