Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Field plate electrode
Reexamination Certificate
2005-09-06
2005-09-06
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Field plate electrode
C438S589000
Reexamination Certificate
active
06939781
ABSTRACT:
In one embodiment of the invention, a semiconductor component includes a semiconductor substrate (110), a first dielectric layer (120) above the semiconductor substrate, a first ohmic contact region (410) and a second ohmic contact region (420) above the semiconductor substrate, a gate electrode (1120) above the semiconductor substrate and between the first ohmic contact region and the second ohmic contact region, a field plate (210) above the first dielectric layer and between the gate electrode and the second ohmic contact region, a second dielectric layer (310) above the field plate, the first dielectric layer, the first ohmic contact region, and the second ohmic contact region, and a third dielectric layer (910) between the gate electrode and the field plate and not located above the gate electrode or the field plate.
REFERENCES:
patent: 5340768 (1994-08-01), Gill
patent: 5605845 (1997-02-01), Young
patent: 5767550 (1998-06-01), Calafut et al.
patent: 5831320 (1998-11-01), Kwon et al.
patent: 5913118 (1999-06-01), Wu
patent: 5925919 (1999-07-01), Kerber
patent: 6033948 (2000-03-01), Kwon et al.
patent: 6107160 (2000-08-01), Hebert et al.
patent: 6465845 (2002-10-01), Baek
patent: 2004/0021182 (2004-02-01), Green et al.
Stanley Wolf and Richard N. Tauber, “Silicon Processing for the VLSI Era—vol. 1: Processing Technology,” Lattice Press, Sunset Beach, California, 1986, p. 124.
Sakura, et al.;100W L-Band GaAs Power FP-HFET Operated at 30V; 2000 IEEE MTT-S Digest, pp. 1715-1718.
Fisher Paul A.
Hartin Olin L.
Klingbeil Lawrence S.
Lan Ellen
Li Hsin-Hua P.
Bryan Cave LLP
Smoot Stephen W.
LandOfFree
Method of manufacturing a semiconductor component that... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor component that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor component that... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3387660