Method of manufacturing a polysilicon resistor having uniform re

Details Method of manufacturing a polysilicon resistor having uniform re Method of manufacturing a polysilicon resistor having uniform re

1996-07-18

1998-03-17

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438382, 438330, H01L 218234

Patent

active

057286159

ABSTRACT:
A method of manufacturing a polysilicon resistor which has a uniform high resistance includes a thermal process to increase the hydrogen concentration uniformity in the polysilicon resistor. The thermal step increases the diffusion of the hydrogen into and out of the third polysilicon, thereby helping to equalize the hydrogen concentration within the polysilicon resistor. The more uniform hydrogen concentration causes the resistance of the polysilicon resistor to be more uniform.

REFERENCES:
patent: 4475964 (1984-10-01), Ariizumi et al.
patent: 5461000 (1995-10-01), Liang

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