Method of manufacturing a nonvolatile semiconductor memory...

Details Method of manufacturing a nonvolatile semiconductor memory... Method of manufacturing a nonvolatile semiconductor memory...

2011-07-05

2011-07-05

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21159, C438S591000

Reexamination Certificate

active

07972927

ABSTRACT:
According to a method of manufacturing a MONOS nonvolatile semiconductor memory device, a tunnel insulating film, a charge storage layer, a block insulating film containing a metal oxide and a control gate electrode are stacked on a semiconductor substrate. Heat treatment is carried out in an atmosphere containing an oxidizing gas after the tunnel insulating film, the charge storage layer and the block insulating film are stacked on the semiconductor substrate. Thereafter, the control gate electrode is formed on the block insulating film.

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patent: 2008/0014745 (2008-01-01), Fujitsuka et al.
patent: 2009/0181530 (2009-07-01), Lisiansky et al.
patent: 2007-282859 (2007-11-01), None
Ozawa, “Semiconductor Device and Method of Manufacturing the Same”, U.S. Appl. No. 12/425,077, filed Apr. 16, 2009.

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