Method of manufacturing a non-volatile semiconductor device

Details Method of manufacturing a non-volatile semiconductor device Method of manufacturing a non-volatile semiconductor device

1995-11-06

1998-05-05

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438593, 438596, H01L 218247

Patent

active

057473706

ABSTRACT:
A non-volatile semiconductor memory device and manufacturing methods therefor, in which the control gate and floating gate are formed in the form of a single level or planar polysilicon layer so as to solve the problem of step coverage. The floating gate is formed in a self-aligning manner. The method may include the steps of: (a) forming a control gate upon an insulated semiconductor substrate; (b) forming an insulating layer upon the control gate; (c) depositing a polysilicon on the entire surface, etching back the polysilicon, and forming side wall floating gates on sides of the control gate; and (d) doping the substrate using the control gate and the side wall floating gates as masks so as to form source and drain regions.

REFERENCES:
patent: 3984822 (1976-10-01), Simko et al.
patent: 5051793 (1991-09-01), Wang
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5143860 (1992-09-01), Mitchell et al.
patent: 5198380 (1993-03-01), Harari
patent: 5494838 (1996-02-01), Chang et al.

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