Method of manufacturing a non-volatile memory cell

Details Method of manufacturing a non-volatile memory cell Method of manufacturing a non-volatile memory cell

2007-02-06

2007-02-06

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21680, C257SE21694, C257S314000, C257S315000, C257S324000

Reexamination Certificate

active

10907920

ABSTRACT:
The present invention relates to a method of manufacturing a non-volatile memory cell. The method comprises forming an ONO stack and a mask formed on the ONO stack, providing a first etching process to form a first spacer surrounding the mask, removing portions of the first spacer and the ONO stack that are not covered by the first spacer and the ONO stack, forming an electrical connection layer between the masks, forming a second spacer surrounding the mask, removing the second spacer to form a gate and removing the mask and the ONO stack which is under the mask.

REFERENCES:
patent: 2004/0197995 (2004-10-01), Lee et al.
patent: 2005/0186734 (2005-08-01), Cho et al.
patent: 2006/0043469 (2006-03-01), Park et al.
patent: 2006/0118859 (2006-06-01), Kim et al.

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