Method of manufacturing a multi-purpose magnetic film structure

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S238000, C438S268000, C438S653000, C438S783000, C257SE21665, C257SE27005, C257SE27026, C257SE29327, C257SE43004

Reexamination Certificate

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07811833

ABSTRACT:
Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

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