Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-09-14
2010-10-12
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S268000, C438S653000, C438S783000, C257SE21665, C257SE27005, C257SE27026, C257SE29327, C257SE43004
Reexamination Certificate
active
07811833
ABSTRACT:
Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
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Gambino Richard J.
Hwang In-jun
Kim Tae-wan
Kim Young-keun
Kwon Soon-ju
Harness & Dickey & Pierce P.L.C.
Lebentritt Michael S
Samsung Electronics Co,. Ltd.
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