Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1994-04-05
1995-09-05
Fourson, George
Etching a substrate: processes
Etching of semiconductor material to produce an article...
437974, 148DIG135, 216 13, 216 47, 216 52, 216 75, 216100, H01L 21302
Patent
active
054476011
ABSTRACT:
The method comprises the steps of providing a substrate wafer (10); depositing a first layer of resist (12) upon the substrate wafer (10); removing selected areas of the first resist layer (12), thereby to provide first etch windows; forming first cavities (16) in the substrate wafer (10) by a first etching process through the first windows; bonding a relatively thick membrane wafer (24) to the substrate wafer (10), thereby covering the cavities (16); polishing the surface of the relatively thick membrane wafer (24) thereby to produce a relatively thin membrane (24a); depositing a second layer of resist (33) on the relatively thin membrane (24a); removing selected areas of the second deposited resist layer, thereby to provide second etch windows (40); etching away the relatively thin membrane (24a) in the region of the second etch windows (40) until the first cavities (16) are exposed, thereby to form in the relatively thin membrane (24a) a free standing resonator structure (18 ) suspended on a plurality of compliant beam mounts (38) extending from a fixed portion (50).
REFERENCES:
patent: 5169472 (1992-12-01), Goebel
patent: 5226321 (1993-07-01), Varnham et al.
patent: 5310450 (1994-05-01), Offenberg et al.
patent: 5320705 (1994-06-01), Fujii et al.
J. Shajii et al., "A Microfabricated Floating-Element Shear Stress Sensor Using Water-Bonding Technology", Jour. of Microelectromechanical Systems, vol. 1, No. 2, Jun. 1992, pp. 89-94.
Bilodeau Thomas G.
British Aerospace PLC
Fourson George
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