Method of manufacturing a metal-insulator-metal capacitor...

Details Method of manufacturing a metal-insulator-metal capacitor... Method of manufacturing a metal-insulator-metal capacitor...

2006-10-10

2006-10-10

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S393000, C257S296000

Reexamination Certificate

active

07118958

ABSTRACT:
The present invention provides a method for manufacturing a metal-insulator-metal (MIM) capacitor, a method for manufacturing an integrated circuit having a metal-insulator-metal (MIM) capacitor, and an integrated circuit having a metal-insulator-metal (MIM) capacitor. The method for manufacturing the metal-insulator-metal (MIM) capacitor, among other steps and without limitation, includes providing a material layer (185) over a substrate (110), and forming a refractory metal layer (210) having a thickness (t1) over the substrate (110), at least a portion of the refractory metal layer (210) extending over the material layer (185). The method further includes reducing the thickness (t2) of the portion of the refractory metal layer (210) extending over the material layer (185), thereby forming a thinned refractory metal layer (310), and reacting the thinned refractory metal layer (310) with at least a portion of the material layer (185) to form an electrode (440) for use in a capacitor.

REFERENCES:
patent: 5554558 (1996-09-01), Hsu et al.
patent: 5554566 (1996-09-01), Lur et al.
patent: 6313516 (2001-11-01), Tsui et al.

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