Method of manufacturing a metal-insulator-metal capacitor

Details Method of manufacturing a metal-insulator-metal capacitor Method of manufacturing a metal-insulator-metal capacitor

2006-04-18

2006-04-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S581000, C438S582000

Reexamination Certificate

active

07029972

ABSTRACT:
The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal layer (105) over a capacitor region (200) of the semiconductor substrate (110) is removed and a second refractory metal (300) is deposited over the capacitor region (200). Other aspects of the present invention include a metal-insulator-metal capacitor (900) and a method of manufacturing an integrated circuit (1000).

REFERENCES:
patent: 5618749 (1997-04-01), Takahashi et al.
patent: 5990507 (1999-11-01), Mochizuki et al.
Chang et al; “Material and Electrical Characterization of Carbon-Doped Ta2O5 Films for Embedded Dynamic Random Access Memory Applications;” Journal of Applied Physics; vol. 91, No. 1; Jan. 2002; pp. 308-316.

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