Method of manufacturing a mask

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000, C700S120000, C700S121000, C378S034000, C378S035000

Reexamination Certificate

active

07873935

ABSTRACT:
A method of manufacturing a mask includes designing a first mask data pattern, designing a second mask data pattern for forming the first mask data pattern, acquiring a first emulation pattern, which is predicted from the second mask data pattern, using layout-based Self-Aligning Double Patterning (SADP) emulation, comparing the first emulation pattern with the first mask data pattern, and modifying the second mask data pattern according to results of the comparison. The method further includes performing Optical Proximity Correction (OPC) on the modified second mask data pattern, acquiring second emulation patterns, which are predicted from the second mask data pattern on which the OPC has been performed, using image-based SADP emulation, and comparing the second emulation patterns and the first mask data pattern and manufacturing a first mask layer, which corresponds to the second mask data pattern on which the OPC has been performed, according to the results of the comparison.

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Erdmann et al.; “Rigorous Electromagnetic Field Simulation of Two-Beam Interference Exposures for the Exploration of Double Patterning and Double Exposure Scenarios”; Mar. 12, 2008; SPIE, vol. 6924; pp. 1-12.
Stine et al.; “A Simulation Methodology for Assessing the Impact of Spatial/Pattern Interconnect Parameter Variation on Circuit Performance”; Dec. 1997; MIT, Department of Electrical Engineering and Computer Science; pp. 1-4.

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