Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-10
2008-10-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S003000, C438S197000, C257SE21400, C257SE21248, C257SE21436, C257SE21546, C257SE21645
Reexamination Certificate
active
07432150
ABSTRACT:
A method of manufacturing a magnetoelectronic device includes providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the electrically conducting material, and implanting a magnetic material into the electrically insulating material. The magnetic material increases the magnetic permeability of the electrically insulating material. The implant may be a blanket or a targeted implant.
REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6430085 (2002-08-01), Rizzo
patent: 6720597 (2004-04-01), Janesky et al.
Durlam Mark A.
Kerszykowski Gloria J.
Rizzo Nicholas D.
Salter Eric J.
Wise Loren J.
Bryan Cave LLP
EverSpin Technologies, Inc.
Nhu David
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