Method of manufacturing a flash memory device

Details Method of manufacturing a flash memory device Method of manufacturing a flash memory device

2007-06-26

2009-02-24

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C438S508000, C257SE21540

Reexamination Certificate

active

07494874

ABSTRACT:
A method of manufacturing a flash memory device includes the steps of forming a tunnel oxide layer and a polysilicon layer over a semiconductor substrate. An etch process is then performed to form a pattern and a trench. An isolation layer is formed in the trench. A polysilicon spacer layer is formed on the resulting surface. A specific region of the polysilicon spacer layer and the isolation layer is etched in a single etch process to form a recess hole in a central portion of the isolation layer. The polysilicon spacer layer is then removed.

REFERENCES:
patent: 2006/0017093 (2006-01-01), Kwon et al.

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