Method of manufacturing a flash memory device

Details Method of manufacturing a flash memory device Method of manufacturing a flash memory device

2007-05-23

2009-06-09

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S275000

Reexamination Certificate

active

07544567

ABSTRACT:
In a method of manufacturing an SONOS type flash memory device, a first oxide layer and a buffer poly layer are formed over a surface of a semiconductor except for a memory cell region of a cell region. A second oxide layer, a nitride layer and a third oxide layer are formed. The poly buffer layer is exposed by etching specific regions in a peri region and in a DSL/SSL region of the cell region. A conductive layer is formed to electrically connect to the poly buffer layer. The third oxide layer, the nitride layer and the second nitride layer are selectively etched to form a gate of the memory cell region of the cell region. The buffer poly layer is selectively etched to form a gate in the DSL/SSL region of the cell region and a gate in the peri region.

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