Method of manufacturing a flash memory cell using a...

Details Method of manufacturing a flash memory cell using a... Method of manufacturing a flash memory cell using a...

2005-01-18

2005-01-18

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000

Reexamination Certificate

active

06844231

ABSTRACT:
A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to etch the trench insulating film to a desired space. Therefore, it is possible to secure the coupling ratio of a floating gate by maximum and implement a device of a smaller size.

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