Method of manufacturing a field effect transistor device...

Details Method of manufacturing a field effect transistor device... Method of manufacturing a field effect transistor device...

2005-12-30

2008-05-13

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S241000, C438S242000, C438S243000, C438S244000, C438S258000, C438S259000, C438S260000, C438S261000, C438S262000, C438S263000, C438S264000, C438S265000, C438S266000, C438S267000, C438S268000, C438S269000, C438S287000, C438S296000, C438S297000, C438S386000, C438S427000, C438S428000, C257S296000, C257S298000, C257S300000, C257S301000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257SE27084, C257SE27085, C257SE27090

Reexamination Certificate

active

07371645

ABSTRACT:
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench isolations that extend along longs sides of the semiconductor fin. A protection liner covers the semiconductor fin and the trench isolations in a bottom portion of the gate groove and the pockets. An insulator collar is formed in the exposed upper sections of the gate groove and the pockets, wherein a lower edge of the insulator collar corresponds to a lower edge of source/drain regions formed within the semiconductor fin. The protection liner is removed. The bottom portion of the gate groove and the pockets are covered with a gate dielectric and a buried gate conductor layer. The protection liner avoids residuals of polycrystalline silicon between the active area in the semiconductor fin and the insulator collar.

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