Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-30
2008-05-13
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S241000, C438S242000, C438S243000, C438S244000, C438S258000, C438S259000, C438S260000, C438S261000, C438S262000, C438S263000, C438S264000, C438S265000, C438S266000, C438S267000, C438S268000, C438S269000, C438S287000, C438S296000, C438S297000, C438S386000, C438S427000, C438S428000, C257S296000, C257S298000, C257S300000, C257S301000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257SE27084, C257SE27085, C257SE27090
Reexamination Certificate
active
07371645
ABSTRACT:
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench isolations that extend along longs sides of the semiconductor fin. A protection liner covers the semiconductor fin and the trench isolations in a bottom portion of the gate groove and the pockets. An insulator collar is formed in the exposed upper sections of the gate groove and the pockets, wherein a lower edge of the insulator collar corresponds to a lower edge of source/drain regions formed within the semiconductor fin. The protection liner is removed. The bottom portion of the gate groove and the pockets are covered with a gate dielectric and a buried gate conductor layer. The protection liner avoids residuals of polycrystalline silicon between the active area in the semiconductor fin and the insulator collar.
REFERENCES:
patent: 5945707 (1999-08-01), Bronner et al.
patent: 6503784 (2003-01-01), Enders et al.
patent: 6586794 (2003-07-01), Nakamura et al.
patent: 6770928 (2004-08-01), Sommer et al.
patent: 2002/0004271 (2002-01-01), Weis
patent: 2004/0197965 (2004-10-01), Birner et al.
patent: 2005/0077563 (2005-04-01), Alsmeier
patent: 2005/0127420 (2005-06-01), Kito et al.
patent: 2005/0151206 (2005-07-01), Schwerin
patent: 2006/0022239 (2006-02-01), Mouli
patent: 2006/0056228 (2006-03-01), Schloesser et al.
patent: 2006/0076602 (2006-04-01), Harter et al.
patent: 2006/0110884 (2006-05-01), Wang et al.
patent: 2006/0244024 (2006-11-01), Manger et al.
patent: 2007/0037345 (2007-02-01), Manger
patent: 2007/0057301 (2007-03-01), Wang et al.
Baars Peter
Muemmler Klaus
Tegen Stefan
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Khosraviani Arman
Loke Steven
LandOfFree
Method of manufacturing a field effect transistor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a field effect transistor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a field effect transistor device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3981638