Method of manufacturing a field effect transistor and a...

Details Method of manufacturing a field effect transistor and a... Method of manufacturing a field effect transistor and a...

2006-03-21

2006-03-21

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S208000, C438S795000

Reexamination Certificate

active

07015084

ABSTRACT:
A gate-overlap-drain structure is obtained by a single pair of a single impurity implantation process and a single laser anneal process, wherein the improved gate-overlap-drain structure includes lightly activated high impurity concentration regions exhibiting substantially the same function as the lightly doped drain regions, wherein the lightly activated high impurity concentration regions are bounded with high impurity concentration regions serving as source and drain regions. The boundaries are self-aligned to edges of a gate electrode. Side regions of the gate electrode overlap the lightly activated high impurity concentration regions.

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Ohgata et al., “A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure”, IEEE, 2000, pp. 205-208.

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