Method of manufacturing a FET gate

Details Method of manufacturing a FET gate Method of manufacturing a FET gate

2007-10-25

2010-11-23

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S669000, C438S585000, C257S407000, C257SE21196, C257SE29152

Reexamination Certificate

active

07838371

ABSTRACT:
A method of manufacturing a FET gate with a plurality of materials includes depositing a dummy region8, and then forming a plurality of metallic layers16, 18, 20on gate dielectric6by conformally depositing a layer of each metallic layer and then anisotropically etching back to leave the metallic layer on the sides10of the dummy region. The dummy region is then removed leaving the metallic layers16,18, 20as the gate over the gate dielectric6.

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