Method of manufacturing a dynamic access memory which is suitabl

Details Method of manufacturing a dynamic access memory which is suitabl Method of manufacturing a dynamic access memory which is suitabl

1997-04-25

1999-10-19

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, 257301, H01L 218242

Patent

active

059703393

ABSTRACT:
A dynamic random access memory (DRAM) and a method of manufacturing the same which is suitable for increasing the integration of a semiconductor device and suppressing the generation of a leakage current using a silicon-on-insulator (SOI) structure are disclosed. The semiconductor device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a semiconductor layer pattern formed on the insulating film, a trench formed in the semiconductor substrate through the semiconductor layer pattern and the insulating film, an electrode of a capacitor formed in the trench for electrically connected to the semiconductor layer pattern, a gate insulating film formed on the semiconductor layer pattern, a gate electrode formed on the gate insulating film, and impurity regions formed in the semiconductor layer pattern.

REFERENCES:
patent: 5504027 (1996-04-01), Jeong et al.
patent: 5508219 (1996-04-01), Bronner et al.
patent: 5525531 (1996-06-01), Bronner et al.
patent: 5585285 (1996-12-01), Tang
patent: 5618745 (1997-04-01), Kita
patent: 5627092 (1997-05-01), Alsmeier et al.
"ULSI DRAM/SIMOX with Stacked Capacitor Cells for Low-Voltage Operation" by T. Eimori et al, IEDM (1993) pp. 45-48.

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