Method of manufacturing a dual contact trench capacitor

Details Method of manufacturing a dual contact trench capacitor Method of manufacturing a dual contact trench capacitor

2011-03-01

2011-03-01

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C438S248000, C438S391000, C257SE21651

Reexamination Certificate

active

07897473

ABSTRACT:
A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.

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Office Action for corresponding U.S. Appl. No. 12/181,338.
Office Action for corresponding U.S. Appl. No. 12/181,343.

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