Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-03-18
2008-03-18
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S589000
Reexamination Certificate
active
07344945
ABSTRACT:
Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.
REFERENCES:
patent: 5326711 (1994-07-01), Malhi
patent: 5473176 (1995-12-01), Kakumoto
patent: 5648283 (1997-07-01), Tsang et al.
patent: 5742076 (1998-04-01), Sridevan et al.
patent: 5760440 (1998-06-01), Kitamura et al.
patent: 5770514 (1998-06-01), Matsuda et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6319777 (2001-11-01), Hueting et al.
patent: 6511885 (2003-01-01), Harada et al.
patent: 6649975 (2003-11-01), Baliga
patent: 6764889 (2004-07-01), Baliga
patent: 6797588 (2004-09-01), Ishikawa et al.
patent: 6838730 (2005-01-01), Kawaguchi et al.
patent: 6974750 (2005-12-01), Haase
patent: 2001/0023959 (2001-09-01), Harada et al.
patent: 2002/0125528 (2002-09-01), Kawaguchi et al.
patent: 2003/0001203 (2003-01-01), Ono et al.
patent: 2003/0006456 (2003-01-01), Takahashi et al.
patent: 102 39 310 (2004-03-01), None
patent: 1 170 803 (2002-01-01), None
Bai Yuming
Lui Kam-Hong
Pattanayak Deva
Qi Jason (Jianhai)
Wong Ronald
Duong Khanh
Smith Zandra V.
Vishay-Siliconix
LandOfFree
Method of manufacturing a drain side gate trench... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a drain side gate trench..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a drain side gate trench... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2808795