Method of manufacturing a CMOS Transistor

Details Method of manufacturing a CMOS Transistor Method of manufacturing a CMOS Transistor

1999-06-04

2000-07-11

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438224, 438228, 438231, 438525, H01L 21336

Patent

active

060872101

ABSTRACT:
The method of manufacturing a CMOS transistor according to the present invention comprises the steps of forming a field oxide at a selected region on a semiconductor substrate to isolate a first region for a NMOS transistor from a second region for a PMOS transistors; forming a P-well region and a N-well region in the first and second regions, respectively; forming a gate oxide film and a gate electrode on selected regions of the first and second regions; implanting low concentration N-type impurities ions to form low concentration impurity implantation regions within the first and second regions; forming spacers at said side walls of the gate electrode and the gate oxide film; forming a high concentration implantation region in the first and second regions; and implanting N-type impurity ions into the second region to form a punch stop doping layer below said low concentration impurity implantation region of the second region.

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