Method of manufacturing a closed cell trench MOSFET

Details Method of manufacturing a closed cell trench MOSFET Method of manufacturing a closed cell trench MOSFET

2008-04-22

2008-04-22

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S431000, C257S331000, C257SE21410

Reexamination Certificate

active

11040129

ABSTRACT:
Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plurality of source regions disposed at the surface of the body region proximate to the periphery of the gate insulator region. A first portion of the gate region and the gate oxide region are formed as parallel elongated structures. A second portion of the gate region and the oxide region are formed as normal-to-parallel elongated structures. A portion of the gate and drain overlap region are selectively blocked by the body region, resulting in lower overall gate to drain capacitance.

REFERENCES:
patent: 5866931 (1999-02-01), Bulucea et al.
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 6133587 (2000-10-01), Takeuchi et al.
patent: 6211018 (2001-04-01), Nam et al.
patent: 6246090 (2001-06-01), Brush et al.
patent: 6346438 (2002-02-01), Yagishita et al.
patent: 6413822 (2002-07-01), Williams et al.
patent: 6627950 (2003-09-01), Bulucea et al.
patent: 6838730 (2005-01-01), Kawaguchi et al.
patent: 6906380 (2005-06-01), Pattanayak et al.
patent: 6919248 (2005-07-01), Francis et al.
patent: 2001/0003367 (2001-06-01), Hshieh et al.
patent: 2002/0019099 (2002-02-01), Williams et al.
patent: 2003/0008460 (2003-01-01), Darwish
patent: 2003/0062570 (2003-04-01), Darwish et al.
patent: 2003/0178673 (2003-09-01), Bhalla et al.
patent: 2004/0195618 (2004-10-01), Saito et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a closed cell trench MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a closed cell trench MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a closed cell trench MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3943988