Method of manufacturing a capacitor in a semiconductor device

Details Method of manufacturing a capacitor in a semiconductor device Method of manufacturing a capacitor in a semiconductor device

2001-05-10

2001-12-04

Tsai, Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S253000

Reexamination Certificate

active

06326259

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates generally to a method of manufacturing a capacitor in a semiconductor device. More particularly, the invention relates to a method of manufacturing a capacitor in a semiconductor device, wherein a metal is used as an upper electrode and a lower electrode, and a dielectric film is formed in a double structure of a titanium-containing tantalum oxide film and an amorphous tantalum oxide film, thus securing a sufficient capacitance while improving an electrical characteristic of the application.
2. Description of the Prior Art
As a semiconductor device is more highly integrated, the cell size of a capacitor is increasingly reduced, although the capacitance per cell necessary for a stable operation of a device is not changed. A capacitor using a tantalum oxide (Ta
2
O
5
) film, which has been developed as a dielectric film, and a polysilicon film as a lower electrode could not secure a sufficient capacitance.
In order to solve this problem, the lower electrode must be formed of a metal layer to lower the effective thickness or to secure its capacitance, or a material having a high dielectric constant than a tantalum oxide film (∈=25) must be used.
SUMMARY OF THE INVENTION
A method of manufacturing a capacitor in a semiconductor device includes the steps of forming a plug and a diffusion prevention film on a semiconductor substrate in which a predetermined structure is formed; depositing a Ru film on the entire structure; patterning the Ru film to form a lower electrode; forming a titanium-containing tantalum oxide film on the entire structure; thereafter performing an annealing process; forming an amorphous tantalum oxide film on the titanium-containing tantalum oxide film; and depositing a metal layer on the entire structure to form an upper electrode.


REFERENCES:
patent: 6051858 (2000-04-01), Uchida et al.
patent: 6114200 (2000-09-01), Yew et al.

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